Reliability of high voltage/high power L/S-band Hbt technology
Identifieur interne : 003999 ( Main/Repository ); précédent : 003998; suivant : 003A00Reliability of high voltage/high power L/S-band Hbt technology
Auteurs : RBID : Pascal:10-0478755Descripteurs français
- Pascal (Inist)
- Fiabilité dispositif semiconducteur, Haute tension, Bande L, Bande S, Transistor bipolaire hétérojonction, Robustesse, Endommagement, Jonction à semiconducteur, Essai longue durée, Durabilité, Energie activation, Analyse dommage, Jonction émetteur base, Dislocation, Epitaxie, Phosphure de gallium, Phosphure d'indium, Composé ternaire, InGaP.
English descriptors
- KwdEn :
- Activation energy, Base emitter junction, Damaging, Dislocation, Durability, Epitaxy, Failure analysis, Gallium phosphide, Heterojunction bipolar transistors, High voltage, Indium phosphide, L band, Long term test, Robustness, S band, Semiconductor device reliability, Semiconductor junctions, Ternary compound.
Abstract
This paper presents the qualification methodology and results of an InGaP HBT process industrialised by UMS to cover high power L and S band applications. The high level of robustness of the technology has been demonstrated with RF test up to 9 dB compression without any degradation. MTTF of 12 FIT/ mm2 of semiconductor at a junction temperature of 175 °C have been demonstrated based on more than 560,000 component hours. Also, following the activation period, an asymptotic decrease of the Beta is pointed out both at WLR and long term reliability test and modelled by a Black law. Activation energy between 0.52 and 0.75 eV and a Black factor between 1 and 2 was found. An original and complete failure analysis methodology including NIR emission microscopy, FIB and TEM analysis, have been used to characterised infant mortality for which the root cause is attributed to the propagation through the base-emitter junction of dislocation in the epitaxy. Activation energy of 0.58 eV was determined for this mechanism.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Reliability of high voltage/high power L/S-band Hbt technology</title><author><name sortKey="Lambert, B" uniqKey="Lambert B">B. Lambert</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Jonsson, G" uniqKey="Jonsson G">G. Jonsson</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>United Monolithic Semiconductor GmbH, Wilhelm-Runge-Strasse 11</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Bataille, J" uniqKey="Bataille J">J. Bataille</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>91401 Orsay</wicri:noRegion><wicri:noRegion>Route Départementale 128</wicri:noRegion><wicri:noRegion>91401 Orsay</wicri:noRegion></affiliation></author><author><name sortKey="Ollivier, C" uniqKey="Ollivier C">C. Ollivier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Mezenge, P" uniqKey="Mezenge P">P. Mezenge</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Derewonko, H" uniqKey="Derewonko H">H. Derewonko</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Thomas, H" uniqKey="Thomas H">H. Thomas</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Floriot, D" uniqKey="Floriot D">D. Floriot</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Blanck, H" uniqKey="Blanck H">H. Blanck</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>United Monolithic Semiconductor GmbH, Wilhelm-Runge-Strasse 11</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Moreau, C" uniqKey="Moreau C">C. Moreau</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>DGA/Informacion Superiority, BP 5741, La Rache Marguerite</s1><s2>35174 Bruz</s2><s3>FRA</s3><sZ>10 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>35174 Bruz</wicri:noRegion><wicri:noRegion>La Rache Marguerite</wicri:noRegion><wicri:noRegion>35174 Bruz</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0478755</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0478755 INIST</idno><idno type="RBID">Pascal:10-0478755</idno><idno type="wicri:Area/Main/Corpus">003B54</idno><idno type="wicri:Area/Main/Repository">003999</idno></publicationStmt><seriesStmt><idno type="ISSN">0026-2714</idno><title level="j" type="abbreviated">Microelectron. reliab.</title><title level="j" type="main">Microelectronics and reliability</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Base emitter junction</term><term>Damaging</term><term>Dislocation</term><term>Durability</term><term>Epitaxy</term><term>Failure analysis</term><term>Gallium phosphide</term><term>Heterojunction bipolar transistors</term><term>High voltage</term><term>Indium phosphide</term><term>L band</term><term>Long term test</term><term>Robustness</term><term>S band</term><term>Semiconductor device reliability</term><term>Semiconductor junctions</term><term>Ternary compound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fiabilité dispositif semiconducteur</term><term>Haute tension</term><term>Bande L</term><term>Bande S</term><term>Transistor bipolaire hétérojonction</term><term>Robustesse</term><term>Endommagement</term><term>Jonction à semiconducteur</term><term>Essai longue durée</term><term>Durabilité</term><term>Energie activation</term><term>Analyse dommage</term><term>Jonction émetteur base</term><term>Dislocation</term><term>Epitaxie</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé ternaire</term><term>InGaP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper presents the qualification methodology and results of an InGaP HBT process industrialised by UMS to cover high power L and S band applications. The high level of robustness of the technology has been demonstrated with RF test up to 9 dB compression without any degradation. MTTF of 12 FIT/ mm<sup>2</sup> of semiconductor at a junction temperature of 175 °C have been demonstrated based on more than 560,000 component hours. Also, following the activation period, an asymptotic decrease of the Beta is pointed out both at WLR and long term reliability test and modelled by a Black law. Activation energy between 0.52 and 0.75 eV and a Black factor between 1 and 2 was found. An original and complete failure analysis methodology including NIR emission microscopy, FIB and TEM analysis, have been used to characterised infant mortality for which the root cause is attributed to the propagation through the base-emitter junction of dislocation in the epitaxy. Activation energy of 0.58 eV was determined for this mechanism.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0026-2714</s0></fA01><fA02 i1="01"><s0>MCRLAS</s0></fA02><fA03 i2="1"><s0>Microelectron. reliab.</s0></fA03><fA05><s2>50</s2></fA05><fA06><s2>9-11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Reliability of high voltage/high power L/S-band Hbt technology</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>21st European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF 2010)</s1></fA09><fA11 i1="01" i2="1"><s1>LAMBERT (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>JONSSON (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>BATAILLE (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>OLLIVIER (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>MEZENGE (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>DEREWONKO (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>THOMAS (H.)</s1></fA11><fA11 i1="08" i2="1"><s1>FLORIOT (D.)</s1></fA11><fA11 i1="09" i2="1"><s1>BLANCK (H.)</s1></fA11><fA11 i1="10" i2="1"><s1>MOREAU (C.)</s1></fA11><fA12 i1="01" i2="1"><s1>BUSATTO (Giovanni)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>IANNUZZO (Francesco)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>United Monolithic semiconductor SAS, Route Départementale 128</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>United Monolithic Semiconductor GmbH, Wilhelm-Runge-Strasse 11</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>DGA/Informacion Superiority, BP 5741, La Rache Marguerite</s1><s2>35174 Bruz</s2><s3>FRA</s3><sZ>10 aut.</sZ></fA14><fA15 i1="01"><s1>Dept. of Automation, Electromagnetism, Information Engineering and Industrial Mathematics (DAEIMI), University of Cassino, Via G. Di Biasio 43</s1><s2>03043 Cassino</s2><s3>ITA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>1543-1547</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9626</s2><s5>354000192440040700</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>8 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0478755</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronics and reliability</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper presents the qualification methodology and results of an InGaP HBT process industrialised by UMS to cover high power L and S band applications. The high level of robustness of the technology has been demonstrated with RF test up to 9 dB compression without any degradation. MTTF of 12 FIT/ mm<sup>2</sup> of semiconductor at a junction temperature of 175 °C have been demonstrated based on more than 560,000 component hours. Also, following the activation period, an asymptotic decrease of the Beta is pointed out both at WLR and long term reliability test and modelled by a Black law. Activation energy between 0.52 and 0.75 eV and a Black factor between 1 and 2 was found. An original and complete failure analysis methodology including NIR emission microscopy, FIB and TEM analysis, have been used to characterised infant mortality for which the root cause is attributed to the propagation through the base-emitter junction of dislocation in the epitaxy. Activation energy of 0.58 eV was determined for this mechanism.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03B</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F02</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Fiabilité dispositif semiconducteur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor device reliability</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Haute tension</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>High voltage</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Alta tensión</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Bande L</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>L band</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Banda L</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Bande S</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>S band</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Banda S</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Robustesse</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Robustness</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Robustez</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Endommagement</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Damaging</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Deterioración</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Jonction à semiconducteur</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor junctions</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Essai longue durée</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Long term test</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Ensayo larga duración</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Durabilité</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Durability</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Durabilidad</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Energie activation</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Activation energy</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Energía activación</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Analyse dommage</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Failure analysis</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Análisis avería</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Jonction émetteur base</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Base emitter junction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Unión emisor base</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Dislocation</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Dislocation</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Dislocación</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Epitaxie</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Epitaxy</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Epitaxia</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Ternary compound</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>InGaP</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Onde décimétrique</s0><s5>16</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>UHF wave</s0><s5>16</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Onda decimétrica</s0><s5>16</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Hyperfréquence</s0><s5>17</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Microwave</s0><s5>17</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Hiperfrecuencia</s0><s5>17</s5></fC07><fC07 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>18</s5></fC07><fC07 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>18</s5></fC07><fC07 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>18</s5></fC07><fN21><s1>312</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010)</s1><s2>21</s2><s3>Monte Cassino Abbey, Gaeta ITA</s3><s4>2010-10-11</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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